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IPI023NE7N3 G

Name: IPI023NE7N3 G
Brand: Infineon Technologies
Price: 21.26 USD
Rating: 4.8 (6586 reviews)

Transistors - FETs, MOSFETs - RF

Manufacturer No:: IPI023NE7N3 G
Manufacture:: Infineon Technologies
Datasheet:: IPI023NE7N3 G
Description:: MOSFET N-CH 75V 120A TO262-3

In Stock

6500 pcs On sales

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Infineon Technologies IPI023NE7N3 G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPI023NE7N3 G.

Categories: Discrete Semiconductor Products
Manufacturer: Infineon Technologies
Series: OptiMOS
Packaging: Tube
Part Status: Obsolete(EOL)
Channel Type Type: N
Technology: MOSFET
Drain Source Voltage: 75V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Vgs(th) (Maximum) @ Id: 3.8V @ 273μA
Gate Charge (Qg) (Maximum) @ Vgs: 206nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 14400pF @ 37.5V
Power Dissipation (Maximum): 300W (Tc)
Rds On (Maximum) @ Id, Vgs: 2.3 mOhm @ 100A, 10V
Operating Temperature Range: -55°C ~ 175°C (TJ)
Mounting Style: Through Hole
Manufacturer Package: PG-TO262-3
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited

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