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IPI110N20N3G

Transistors - FETs, MOSFETs - RF

Manufacturer No:
IPI110N20N3G
Manufacture:
Infineon Technologies
Datasheet:
IPI110N20N3G
Description:
MOSFET N-CH 200V 88A TO262-3

In Stock

44 pcs On sales

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Shipping Method
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Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Infineon Technologies IPI110N20N3G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPI110N20N3G.

Categories
Discrete Semiconductor Products
Manufacturer
Infineon Technologies
Packaging
Tube/Rail
Status
Active
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
200V
Continuous Drain Current at 25°C
88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate-Source Threshold Voltage
4V @ 270μA
Max Gate Charge
87nC @ 10V
Max Input Capacitance
7100pF @ 100V
Maximum Gate-Source Voltage
±20V
Power Dissipation (Max)
300W (Tc)
Maximum Rds On at Id,Vgs
11 mOhm @ 88A, 10V
Temperature Range - Operating
-55°C to 175°C (TJ)
Mounting
Through Hole
Case / Package
PG-TO262-3
Dimension
TO-262-3 Long Leads, I2Pak, TO-262AA
Is this a common-used part?
Yes
Popularity
High
Fake Threat In the Open Market
67 pct.
Supply and Demand Status
Limited

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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