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IPP015N04NGXKSA1

Transistors - FETs, MOSFETs - RF

Manufacturer No:
IPP015N04NGXKSA1
Manufacture:
Infineon Technologies
Datasheet:
IPP015N04NGXKSA1
Description:
MOSFET N-CH 40V 120A TO220-3

In Stock

7800 pcs On sales

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Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Infineon Technologies IPP015N04NGXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP015N04NGXKSA1.

Categories
Discrete Semiconductor Products
Manufacturer
Infineon Technologies
Packaging
Tube/Rail
Status
Active
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
40V
Continuous Drain Current at 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate-Source Threshold Voltage
4V @ 200μA
Max Gate Charge
250nC @ 10V
Max Input Capacitance
20000pF @ 20V
Maximum Gate-Source Voltage
±20V
Power Dissipation (Max)
250W (Tc)
Maximum Rds On at Id,Vgs
1.5 mOhm @ 100A, 10V
Temperature Range - Operating
-55°C to 175°C (TJ)
Mounting
Through Hole
Case / Package
PG-TO220-3-1
Dimension
TO-220-3
Popularity
Medium
Fake Threat In the Open Market
28 pct.
Supply and Demand Status
Limited

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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