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IPP100N04S4H2AKSA1

Transistors - FETs, MOSFETs - RF

Manufacturer No:
IPP100N04S4H2AKSA1
Manufacture:
Infineon Technologies
Datasheet:
IPP100N04S4H2AKSA1
Description:
MOSFET N-CH 40V 100A TO220-3-1

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0 pcs On sales

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Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Infineon Technologies IPP100N04S4H2AKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP100N04S4H2AKSA1.

Categories
Discrete Semiconductor Products
Manufacturer
Infineon Technologies
Packaging
Tube/Rail
Status
Active
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
40V
Continuous Drain Current at 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate-Source Threshold Voltage
4V @ 70μA
Max Gate Charge
90nC @ 10V
Max Input Capacitance
7180pF @ 25V
Maximum Gate-Source Voltage
±20V
Power Dissipation (Max)
115W (Tc)
Maximum Rds On at Id,Vgs
2.7 mOhm @ 100A, 10V
Temperature Range - Operating
-55°C to 175°C (TJ)
Mounting
Through Hole
Case / Package
PG-TO220-3-1
Dimension
TO-220-3
Popularity
Medium
Fake Threat In the Open Market
66 pct.
Supply and Demand Status
Balance

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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