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IPP80N03S4L-03

Transistors - FETs, MOSFETs - RF

Manufacturer No:
IPP80N03S4L-03
Manufacture:
Infineon Technologies
Datasheet:
IPP80N03S4L-03
Description:
MOSFET N-CH 30V 80A TO220-3

In Stock

5020 pcs On sales

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Product Attribute

Infineon Technologies IPP80N03S4L-03 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP80N03S4L-03.

Categories
Discrete Semiconductor Products
Manufacturer
Infineon Technologies
Packaging
Tube/Rail
Status
Active
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
30V
Continuous Drain Current at 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Gate-Source Threshold Voltage
2.2V @ 90μA
Max Gate Charge
140nC @ 10V
Max Input Capacitance
9750pF @ 25V
Maximum Gate-Source Voltage
±16V
Power Dissipation (Max)
136W (Tc)
Maximum Rds On at Id,Vgs
2.7 mOhm @ 80A, 10V
Temperature Range - Operating
-55°C to 175°C (TJ)
Mounting
Through Hole
Case / Package
PG-TO220-3-1
Dimension
TO-220-3
Popularity
Medium
Fake Threat In the Open Market
54 pct.
Supply and Demand Status
Balance

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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