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IRFL014NPBF
- Manufacturer No:
- IRFL014NPBF
- Manufacture:
- Infineon Technologies
- Datasheet:
- IRFL014NPBF
- Description:
- HEXFET Power MOSFET | MOSFET N-CH 55V 1.9A SOT223
In Stock
26000 pcs On sales
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Shipping Cost
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
Infineon Technologies IRFL014NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFL014NPBF.
- Categories
- Discrete Semiconductor Products
- Manufacturer
- Infineon Technologies
- Packaging
- Tube
- Transistor Polarity
- N-Channel
- Technology
- MOSFET
- Vds - Drain-Source Breakdown Voltage
- 55V
- Id - Continuous Drain Current
- 1.9A
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Rds On (Maximum) at Id, Vgs
- 160mOhm at 1.9A, 10V
- Gate Source Voltage(th) (Maximum) at Id
- 4V at 250μA
- Gate Charge (Qg) (Maximum) at Vgs
- 11nC at 10V
- Gate Source Voltage (Maximum)
- ±20V
- Input Capacitance (Ciss) (Maximum) at Vds
- 190pF at 25V
- Power Dissipation (Maximum)
- 1W
- Temperature Range - Operating
- -55°C ~ 150°C
- Mounting Style
- SMD
- Supplier Device Package
- SOT-223
- Manufacturer Package
- TO-261-4, TO-261AA
- Manufacturer Pack Quantity
- 1,760
- MSL Level
- 1 (Unlimited)
- Manufacturer Homepage
- www.irf.com
- Popularity
- Medium
- Fake Threat In the Open Market
- 37 pct.
- Supply and Demand Status
- Limited
Company Profile
IRFL014NPBF Relevant information
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