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IRFN9140
Transistors - FETs, MOSFETs - RF
- Manufacturer No:
- IRFN9140
- Manufacture:
- Infineon Technologies
- Datasheet:
- IRFN9140
- Description:
- Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
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Shipping Cost
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
Infineon Technologies IRFN9140 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFN9140.
- Mounting
- SMD (SMT)
- Termination
- SMD/SMT
- Continuous Drain Current (ID)
- -11 A
- Drain to Source Breakdown Voltage
- -100 V
- Drain to Source Resistance
- 200 mΩ
- Drain to Source Voltage (Vdss)
- -100 V
- Element Configuration
- Single
- Gate to Source Voltage (Vgs)
- 20 V
- Height
- 3.0734 mm
- Input Capacitance
- 1.4 nF
- Lead Free
- Contains Lead
- Length
- 11.5316 mm
- Maximum Operating Temperature
- 150 °C
- Max Power Dissipation
- 125 W
- Min Operating Temperature
- -50 °C
- Mount
- Surface Mount
- Nominal Vgs
- -4 V
- Number of Pins
- 3
- On-State Resistance
- 200 mΩ
- Power Dissipation
- 125 W
- Radiation Hardening
- No
- REACH SVHC
- No SVHC
- RoHS
- Non-Compliant
- Turn-Off Delay Time
- 85 ns
- Turn-On Delay Time
- 35 ns
- Width
- 16.002 mm
- Categories
- Transistors - FETs, MOSFETs - RF
- Manufacturer
- Infineon Technologies
- Popularity
- Low
- Fake Threat In the Open Market
- 43 pct.
- Supply and Demand Status
- Shortage
Company Profile
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