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SPD11N10

Transistors - FETs, MOSFETs - RF

Manufacturer No:
SPD11N10
Manufacture:
Infineon Technologies
Datasheet:
SPD11N10
Description:
MOSFET N-CH 100V 10.5A DPAK

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0 pcs On sales

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Delivery Time
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Product Attribute

Infineon Technologies SPD11N10 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies SPD11N10.

Categories
Discrete Semiconductor Products
Manufacturer
Infineon Technologies
Packaging
Reel - TR
Status
Obsolete(EOL)
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
100V
Continuous Drain Current at 25°C
10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate-Source Threshold Voltage
4V @ 21μA
Max Gate Charge
18.3nC @ 10V
Max Input Capacitance
400pF @ 25V
Maximum Gate-Source Voltage
±20V
Power Dissipation (Max)
50W (Tc)
Maximum Rds On at Id,Vgs
170 mOhm @ 7.8A, 10V
Temperature Range - Operating
-55°C to 175°C (TJ)
Mounting
SMD (SMT)
Case / Package
P-TO252-3
Dimension
TO-252-3, DPak (2 Leads + Tab), SC-63
Popularity
Medium
Fake Threat In the Open Market
34 pct.
Supply and Demand Status
Balance
Application Field
Used in Power Management, LED Lighting

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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