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IXTA06N120P

Name: IXTA06N120P
Brand: IXYS
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

Transistors - FETs, MOSFETs - RF

Manufacturer No:: IXTA06N120P
Manufacture:: IXYS
Datasheet:: IXTA06N120P
Description:: MOSFET N-CH 1200V 0.6A TO-263

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0 pcs On sales

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Shipping Cost

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Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

IXYS IXTA06N120P technical specifications, attributes, parameters and parts with similar specifications to IXYS IXTA06N120P.

Categories: Discrete Semiconductor Products
Manufacturer: IXYS
Packaging: Tube/Rail
Status: Active
Polarity: N-Channel
Technology: MOSFET
Drain-Source Breakdown Voltage: 1200V (1.2kV)
Continuous Drain Current at 25°C: 600mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 13.3nC @ 10V
Max Input Capacitance: 270pF @ 25V
Maximum Gate-Source Voltage: ±20V
Power Dissipation (Max): 42W (Tc)
Maximum Rds On at Id,Vgs: 32 Ohm @ 300mA, 10V
Temperature Range - Operating: -55°C to 150°C (TJ)
Mounting: SMD (SMT)
Case / Package: TO-263 (IXTA)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.