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IXTP01N100D

Transistors - FETs, MOSFETs - RF

Manufacturer No:
IXTP01N100D
Manufacture:
IXYS
Datasheet:
IXTP01N100D
Description:
MOSFET N-CH 1KV .1A TO-220AB

In Stock

9800 pcs On sales

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Shipping Cost
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Shipping Method
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Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

IXYS IXTP01N100D technical specifications, attributes, parameters and parts with similar specifications to IXYS IXTP01N100D.

Categories
Discrete Semiconductor Products
Manufacturer
IXYS
Packaging
Tube/Rail
Status
Active
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
1000V (1kV)
Continuous Drain Current at 25°C
100mA (Tc)
Max Input Capacitance
120pF @ 25V
Maximum Gate-Source Voltage
±20V
FET Feature
Depletion Mode
Power Dissipation (Max)
1.1W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs
110 Ohm @ 50mA, 0V
Temperature Range - Operating
-55°C to 150°C (TJ)
Mounting
Through Hole
Case / Package
TO-220AB
Dimension
TO-220-3
Popularity
Medium
Fake Threat In the Open Market
65 pct.
Supply and Demand Status
Limited

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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