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LND250K1-G
- Manufacturer No:
- LND250K1-G
- Manufacture:
- Microchip Technology
- Datasheet:
- LND250K1-G
- Description:
- N-Channel Depletion-Mode DMOS FET | MOSFET N-CH 500V 0.013A SOT23-3
In Stock
4000 pcs On sales
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Shipping Cost
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
Microchip Technology LND250K1-G technical specifications, attributes, parameters and parts with similar specifications to Microchip Technology LND250K1-G.
- Categories
- Discrete Semiconductor Products
- Manufacturer
- Microchip Technology
- Packaging
- Reel
- Transistor Polarity
- N-Channel
- Technology
- MOSFET
- Vds - Drain-Source Breakdown Voltage
- 500V
- Id - Continuous Drain Current
- 13mA
- Drive Voltage (Max Rds On, Min Rds On)
- 0V
- Rds On (Maximum) at Id, Vgs
- 1000Ohm at 500μA, 0V
- Gate Source Voltage (Maximum)
- ±20V
- Input Capacitance (Ciss) (Maximum) at Vds
- 10pF at 25V
- FET Feature
- Depletion Mode
- Power Dissipation (Maximum)
- 360mW
- Temperature Range - Operating
- -55°C ~ 150°C
- Mounting Style
- SMD
- Supplier Device Package
- SOT-23 (TO-236AB)
- Manufacturer Package
- TO-236-3, SC-59, SOT-23-3
- Manufacturer Pack Quantity
- 1
- MSL Level
- 1 (Unlimited)
- Manufacturer Homepage
- www.supertex.com
- Popularity
- Medium
- Fake Threat In the Open Market
- 65 pct.
- Supply and Demand Status
- Limited
Company Profile
LND250K1-G Relevant information
LND250K1
N-Channel Depletion-Mode MOSFET
LND250K1-G
N-Channel Depletion-Mode DMOS FET | MOSFET N-CH 500V 0.013A SOT23-3