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TP2635N3-G

Transistors - FETs, MOSFETs - RF

Manufacturer No:
TP2635N3-G
Manufacture:
Microchip Technology
Package:
TO-226-3, TO-92-3 (TO-226AA)
Datasheet:
TP2635N3-G
Description:
MOSFET P-CH 350V 180MA TO92-3 / P-Channel 350 V 180mA (Tj) 1W (Ta) Through Hole TO-92-3

In Stock

6210 pcs On sales

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Product Attribute

Microchip Technology TP2635N3-G technical specifications, attributes, parameters and parts with similar specifications to Microchip Technology TP2635N3-G.

Category
Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr
Microchip Technology
Package
Bag
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
350 V
Current - Continuous Drain (Id) @ 25°C
180mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Rds On (Max) @ Id, Vgs
15Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
300 pF @ 25 V
Power Dissipation (Max)
1W (Ta)
Temperature Range - Operating
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92-3
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Base Product Number
TP2635
MSL Level
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1,000
Fake Threat In the Open Market
54 pct.

Company Profile

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