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APTSM120AM55CT1AG

Transistors - FETs, MOSFETs - RF

Manufacturer No:
APTSM120AM55CT1AG
Manufacture:
Microsemi Corporation
Datasheet:
APTSM120AM55CT1AG
Description:
POWER MODULE - SIC

In Stock

0 pcs On sales

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Product Attribute

Microsemi Corporation APTSM120AM55CT1AG technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTSM120AM55CT1AG.

Categories
Discrete Semiconductor Products
Manufacturer
Microsemi Corporation
Packaging
Bulk
Status
Active
FET Type
2 N-Channel (Dual), Schottky
FET Feature
Silicon Carbide (SiC)
Drain-Source Breakdown Voltage
1200V (1.2kV)
Continuous Drain Current at 25°C
74A (Tc)
Maximum Rds On at Id,Vgs
50 mOhm @ 40A, 20V
Gate-Source Threshold Voltage
3V @ 2mA
Max Gate Charge
272nC @ 20V
Max Input Capacitance
5120pF @ 1000V
Maximum Power Dissipation
470W
Temperature Range - Operating
-40°C to 175°C (TJ)
Mounting
Chassis Mount
Case / Package
SP1
Popularity
Medium
Fake Threat In the Open Market
70 pct.
Supply and Demand Status
Sufficient

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

APTSM120AM55CT1AG Relevant information

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4.5 - 14Vdc input; 0.59Vdc to 5.5Vdc output; 6A output current

APTSM120AM55CT1AG
APTSM120AM55CT1AG

POWER MODULE - SIC

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