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BFG10/X,215

RF Transistors (BJT)

Manufacturer No:
BFG10/X,215
Manufacture:
NXP
Datasheet:
BFG10/X,215
Description:
TRANS RF NPN 2GHZ 8V SOT143

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0 pcs On sales

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Product Attribute

NXP BFG10/X,215 technical specifications, attributes, parameters and parts with similar specifications to NXP BFG10/X,215.

Categories
Discrete Semiconductor Products
Manufacturer
NXP
Packaging
Reel - TR
Status
Obsolete(EOL)
Transistor Polarity
NPN
VCEO Maximum Collector-Emitter Breakdown Voltage
8V
Frequency - Transition
1.9GHz
Gain
7dB
Maximum Power Dissipation
400mW
Typical Gain (hFE) (Min)
25 @ 50mA, 5V
Maximum Current Collector
250mA
Temperature Range - Operating
175°C (TJ)
Mounting
SMD (SMT)
Case / Package
SOT-143B
Popularity
Medium
Fake Threat In the Open Market
59 pct.
Supply and Demand Status
Balance

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BFG10/X,215 Relevant information

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