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BFR30,215

JFETs (Junction Field Effect)

Manufacturer No:
BFR30,215
Manufacture:
NXP
Datasheet:
BFR30,215
Description:
JFET N-CH 10MA 250MW SOT23

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0 pcs On sales

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Product Attribute

NXP BFR30,215 technical specifications, attributes, parameters and parts with similar specifications to NXP BFR30,215.

Categories
Discrete Semiconductor Products
Manufacturer
NXP
Packaging
Reel - TR
Status
Active
Polarity
N-Channel
Drain-Source Breakdown Voltage
25V
Current - Drain (Idss) @ Vds (Vgs=0)
4mA @ 10V
Current Drain (Id) - Max
10mA
Voltage - Cutoff (VGS off) @ Id
5V @ 0.5nA
Max Input Capacitance
4pF @ 10V
Maximum Power Dissipation
250mW
Temperature Range - Operating
150°C (TJ)
Mounting
SMD (SMT)
Case / Package
SOT-23 (TO-236AB)
Popularity
Medium
Fake Threat In the Open Market
39 pct.
Supply and Demand Status
Balance

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BFR30,215 Relevant information

BFR30
BFR30

N-channel field-effect transistors

BFR30,215
BFR30,215

JFET N-CH 10MA 250MW SOT23

BFR30LT1
BFR30LT1

JFET N-CH 225MW SOT23 / Trans JFET N-CH 25V 3-Pin SOT-23 T/R

BFR30LT1G
BFR30LT1G

JFET Amplifiers(N-Channel)

BFR31
BFR31

N-channel field-effect transistors

BFR31,215
BFR31,215

JFET N-CH 10MA 250MW SOT23

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