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PBRN113ET,215

Transistors (BJT) - Single, Pre - Biased

Manufacturer No:
PBRN113ET,215
Manufacture:
NXP
Datasheet:
PBRN113ET,215
Description:
TRANS PREBIAS NPN 250MW TO236AB

In Stock

19000 pcs On sales

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Product Attribute

NXP PBRN113ET,215 technical specifications, attributes, parameters and parts with similar specifications to NXP PBRN113ET,215.

Categories
Discrete Semiconductor Products
Manufacturer
Nexperia USA Inc.
Packaging
Reel - TR
Status
Active
Transistor Polarity
NPN - Pre-Biased
Maximum Current Collector
600mA
VCEO Maximum Collector-Emitter Breakdown Voltage
40V
Resistor - Base (R1) (Ohms)
1k
Resistor - Emitter Base (R2) (Ohms)
1k
Typical Gain (hFE) (Min)
180 @ 300mA, 5V
Max Vce (sat)
1.15V @ 8mA, 800mA
Collector Cut-off Current(Max)
500nA
Maximum Power Dissipation
250mW
Mounting
SMD (SMT)
Case / Package
TO-236AB (SOT23)
Popularity
Medium
Fake Threat In the Open Market
45 pct.
Supply and Demand Status
Limited

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

PBRN113ET,215 Relevant information

PBRN113ET
PBRN113ET

NPN 800 mA, 40 V BISS RETs; R1 = 1 kΩ, R2 = 1 kΩ

PBRN113ET,215
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PBRN123YK,115
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