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PDTB113ET

Name: PDTB113ET
Brand: NXP
Price: 0.6 USD
Rating: 4.8 (6586 reviews)

Transistors (BJT) - Single, Pre - Biased

Manufacturer No:: PDTB113ET
Manufacture:: NXP
Datasheet:: PDTB113ET
Description:: TRANS PREBIAS PNP 250MW TO236AB

In Stock

12100 pcs On sales

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Shipping Cost

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Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

NXP PDTB113ET technical specifications, attributes, parameters and parts with similar specifications to NXP PDTB113ET.

Categories: Discrete Semiconductor Products
Manufacturer: Nexperia USA Inc.
Packaging: Reel - TR
Status: Active
Transistor Polarity: PNP - Pre-Biased
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 1k
Typical Gain (hFE) (Min): 33 @ 50mA, 5V
Max Vce (sat): 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max): 500nA
Maximum Power Dissipation: 250mW
Mounting: SMD (SMT)
Case / Package: TO-236AB (SOT23)
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Company Profile

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