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PDTD113ZT

Transistors (BJT) - Single, Pre - Biased

Manufacturer No:
PDTD113ZT
Manufacture:
NXP
Datasheet:
PDTD113ZT
Description:
TRANS PREBIAS NPN 250MW TO236AB

In Stock

4600 pcs On sales

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Product Attribute

NXP PDTD113ZT technical specifications, attributes, parameters and parts with similar specifications to NXP PDTD113ZT.

Categories
Discrete Semiconductor Products
Manufacturer
Nexperia USA Inc.
Packaging
Cut Reel
Status
Active
Transistor Polarity
NPN - Pre-Biased
Maximum Current Collector
500mA
VCEO Maximum Collector-Emitter Breakdown Voltage
50V
Resistor - Base (R1) (Ohms)
1k
Resistor - Emitter Base (R2) (Ohms)
10k
Typical Gain (hFE) (Min)
70 @ 50mA, 5V
Max Vce (sat)
300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max)
500nA
Maximum Power Dissipation
250mW
Mounting
SMD (SMT)
Case / Package
TO-236AB (SOT23)
Is this a common-used part?
Yes
Popularity
High
Fake Threat In the Open Market
64 pct.
Supply and Demand Status
Limited

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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