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PDTD123YT,215

Transistors (BJT) - Single, Pre - Biased

Manufacturer No:
PDTD123YT,215
Manufacture:
NXP
Datasheet:
PDTD123YT,215
Description:
TRANS PREBIAS NPN 250MW TO236AB

In Stock

5800 pcs On sales

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Product Attribute

NXP PDTD123YT,215 technical specifications, attributes, parameters and parts with similar specifications to NXP PDTD123YT,215.

Categories
Discrete Semiconductor Products
Manufacturer
Nexperia USA Inc.
Packaging
Reel - TR
Status
Active
Transistor Polarity
NPN - Pre-Biased
Maximum Current Collector
500mA
VCEO Maximum Collector-Emitter Breakdown Voltage
50V
Resistor - Base (R1) (Ohms)
2.2k
Resistor - Emitter Base (R2) (Ohms)
10k
Typical Gain (hFE) (Min)
70 @ 50mA, 5V
Max Vce (sat)
300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max)
500nA
Maximum Power Dissipation
250mW
Mounting
SMD (SMT)
Case / Package
TO-236AB (SOT23)
Popularity
Medium
Fake Threat In the Open Market
62 pct.
Supply and Demand Status
Limited

Company Profile

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