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PEMT1,115

Transistors (BJT) - Arrays

Manufacturer No:
PEMT1,115
Manufacture:
NXP
Datasheet:
PEMT1,115
Description:
TRANS 2PNP 40V 0.1A SOT666

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56000 pcs On sales

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Product Attribute

NXP PEMT1,115 technical specifications, attributes, parameters and parts with similar specifications to NXP PEMT1,115.

Categories
Discrete Semiconductor Products
Manufacturer
Nexperia USA Inc.
Packaging
Reel - TR
Status
Active
Transistor Polarity
2 PNP (Dual)
Maximum Current Collector
100mA
VCEO Maximum Collector-Emitter Breakdown Voltage
40V
Max Vce (sat)
200mV @ 5mA, 50mA
Collector Cut-off Current(Max)
100nA (ICBO)
Typical Gain (hFE) (Min)
120 @ 1mA, 6V
Maximum Power Dissipation
300mW
Frequency - Transition
100MHz
Temperature Range - Operating
150°C (TJ)
Mounting
SMD (SMT)
Case / Package
SOT-666
Popularity
Medium
Fake Threat In the Open Market
29 pct.
Supply and Demand Status
Sufficient

Company Profile

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PEMT1,115 Relevant information

PEMT1
PEMT1

PNP general purpose double transistor

PEMT1,115
PEMT1,115

TRANS 2PNP 40V 0.1A SOT666

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