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PHB45NQ10T,118

Transistors - FETs, MOSFETs - RF

Manufacturer No:
PHB45NQ10T,118
Manufacture:
NXP
Datasheet:
PHB45NQ10T,118
Description:
MOSFET N-CH 100V 47A D2PAK

In Stock

10300 pcs On sales

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Product Attribute

NXP PHB45NQ10T,118 technical specifications, attributes, parameters and parts with similar specifications to NXP PHB45NQ10T,118.

Categories
Discrete Semiconductor Products
Manufacturer
Nexperia USA Inc.
Packaging
Reel - TR
Status
Active
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
100V
Continuous Drain Current at 25°C
47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate-Source Threshold Voltage
4V @ 1mA
Max Gate Charge
61nC @ 10V
Max Input Capacitance
2600pF @ 25V
Maximum Gate-Source Voltage
±20V
Power Dissipation (Max)
150W (Tc)
Maximum Rds On at Id,Vgs
25 mOhm @ 25A, 10V
Temperature Range - Operating
-55°C to 175°C (TJ)
Mounting
SMD (SMT)
Case / Package
D2PAK
Dimension
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Popularity
Medium
Fake Threat In the Open Market
48 pct.
Supply and Demand Status
Limited

Company Profile

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MOSFET N-CH 100V 47A D2PAK

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