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PHD108NQ03LT

Transistors - FETs, MOSFETs - RF

Manufacturer No:
PHD108NQ03LT
Manufacture:
NXP
Datasheet:
PHD108NQ03LT
Description:
MOSFET N-CH 25V 75A DPAK

In Stock

11600 pcs On sales

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Product Attribute

NXP PHD108NQ03LT technical specifications, attributes, parameters and parts with similar specifications to NXP PHD108NQ03LT.

Categories
Discrete Semiconductor Products
Manufacturer
NXP
Packaging
Reel - TR
Status
Obsolete(EOL)
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
25V
Continuous Drain Current at 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Gate-Source Threshold Voltage
2V @ 1mA
Max Gate Charge
16.3nC @ 4.5V
Max Input Capacitance
1375pF @ 12V
Maximum Gate-Source Voltage
±20V
Power Dissipation (Max)
187W (Tc)
Maximum Rds On at Id,Vgs
6 mOhm @ 25A, 10V
Temperature Range - Operating
-55°C to 175°C (TJ)
Mounting
SMD (SMT)
Case / Package
DPAK
Dimension
TO-252-3, DPak (2 Leads + Tab), SC-63
Popularity
Medium
Fake Threat In the Open Market
65 pct.
Supply and Demand Status
Balance

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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