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PHD3055E,118

Name: PHD3055E,118
Brand: NXP
Price: 0.28 USD
Rating: 4.8 (6586 reviews)

Transistors - FETs, MOSFETs - RF

Manufacturer No:: PHD3055E,118
Manufacture:: NXP
Datasheet:: PHD3055E,118
Description:: MOSFET N-CH 60V 10.3A DPAK

In Stock

20000 pcs On sales

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Delivery Time

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Product Attribute

NXP PHD3055E,118 technical specifications, attributes, parameters and parts with similar specifications to NXP PHD3055E,118.

Categories: Discrete Semiconductor Products
Manufacturer: NXP
Packaging: Reel - TR
Status: Obsolete(EOL)
Polarity: N-Channel
Technology: MOSFET
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 10.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 5.8nC @ 10V
Max Input Capacitance: 250pF @ 25V
Maximum Gate-Source Voltage: ±20V
Power Dissipation (Max): 33W (Tc)
Maximum Rds On at Id,Vgs: 150 mOhm @ 5.5A, 10V
Temperature Range - Operating: -55°C to 175°C (TJ)
Mounting: SMD (SMT)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

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