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PHM25NQ10T,518
Transistors - FETs, MOSFETs - RF
- Manufacturer No:
- PHM25NQ10T,518
- Manufacture:
- NXP
- Datasheet:
- PHM25NQ10T,518
- Description:
- MOSFET N-CH 100V 30.7A 8HVSON
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0 pcs On sales
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Shipping Cost
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
NXP PHM25NQ10T,518 technical specifications, attributes, parameters and parts with similar specifications to NXP PHM25NQ10T,518.
- Categories
- Discrete Semiconductor Products
- Manufacturer
- NXP
- Packaging
- Reel - TR
- Status
- Obsolete(EOL)
- Polarity
- N-Channel
- Technology
- MOSFET
- Drain-Source Breakdown Voltage
- 100V
- Continuous Drain Current at 25°C
- 30.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Gate-Source Threshold Voltage
- 4V @ 1mA
- Max Gate Charge
- 26.6nC @ 10V
- Max Input Capacitance
- 1800pF @ 20V
- Maximum Gate-Source Voltage
- ±20V
- Power Dissipation (Max)
- 62.5W (Tc)
- Maximum Rds On at Id,Vgs
- 30 mOhm @ 10A, 10V
- Temperature Range - Operating
- -55°C to 150°C (TJ)
- Mounting
- SMD (SMT)
- Case / Package
- 8-HVSON (6x5)
- Dimension
- 8-VDFN Exposed Pad
- Popularity
- Medium
- Fake Threat In the Open Market
- 32 pct.
- Supply and Demand Status
- Balance
Company Profile
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PHM25NQ10T,518
MOSFET N-CH 100V 30.7A 8HVSON