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PHT2NQ10T,135
Transistors - FETs, MOSFETs - RF
- Manufacturer No:
- PHT2NQ10T,135
- Manufacture:
- NXP
- Datasheet:
- PHT2NQ10T,135
- Description:
- MOSFET N-CH 100V 2.5A SOT223
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0 pcs On sales
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Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
NXP PHT2NQ10T,135 technical specifications, attributes, parameters and parts with similar specifications to NXP PHT2NQ10T,135.
- Categories
- Discrete Semiconductor Products
- Manufacturer
- NXP
- Packaging
- Reel - TR
- Status
- Obsolete(EOL)
- Polarity
- N-Channel
- Technology
- MOSFET
- Drain-Source Breakdown Voltage
- 100V
- Continuous Drain Current at 25°C
- 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Gate-Source Threshold Voltage
- 4V @ 1mA
- Max Gate Charge
- 5.1nC @ 10V
- Max Input Capacitance
- 160pF @ 25V
- Maximum Gate-Source Voltage
- ±20V
- Power Dissipation (Max)
- 6.25W (Tc)
- Maximum Rds On at Id,Vgs
- 430 mOhm @ 1.75A, 10V
- Temperature Range - Operating
- -65°C to 150°C (TJ)
- Mounting
- SMD (SMT)
- Case / Package
- SOT-223
- Dimension
- TO-261-4, TO-261AA
- Popularity
- Medium
- Fake Threat In the Open Market
- 55 pct.
- Supply and Demand Status
- Balance
Company Profile
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MOSFET N-CH 100V 2.5A SOT223