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PMGD130UN,115

Name: PMGD130UN,115
Brand: NXP
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

Transistors - FETs, MOSFETs - RF

Manufacturer No:: PMGD130UN,115
Manufacture:: NXP
Datasheet:: PMGD130UN,115
Description:: MOSFET 2N-CH 20V 1.2A 6TSSOP

In Stock

0 pcs On sales

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Product Attribute

NXP PMGD130UN,115 technical specifications, attributes, parameters and parts with similar specifications to NXP PMGD130UN,115.

Categories: Discrete Semiconductor Products
Manufacturer: NXP
Packaging: Reel - TR
Status: Obsolete(EOL)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.2A
Maximum Rds On at Id,Vgs: 145 mOhm @ 1.2A, 4.5V
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 1.3nC @ 4.5V
Max Input Capacitance: 83pF @ 10V
Maximum Power Dissipation: 390mW
Temperature Range - Operating: -55°C to 150°C (TJ)
Mounting: SMD (SMT)
Case / Package: 6-TSSOP
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs

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