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2N5302G

RF Transistors (BJT)

Manufacturer No:
2N5302G
Manufacture:
ON Semiconductor
Package:
TO-204AA, TO-3
Datasheet:
2N5302G
Description:
TRANS NPN 60V 30A TO204 / Bipolar (BJT) Transistor NPN 60 V 30 A 2MHz 200 W Through Hole TO-204 (TO-3)

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Product Attribute

ON Semiconductor 2N5302G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N5302G.

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr
onsemi
Package
Tray
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
30 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
3V @ 6A, 30A
Current - Collector Cutoff (Max)
5mA
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 15A, 2V
Power - Max
200 W
Frequency - Transition
2MHz
Temperature Range - Operating
-65°C ~ 200°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Supplier Device Package
TO-204 (TO-3)
Base Product Number
2N5302
MSL Level
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
ONSONS2N5302G,2N5302GOS,2156-2N5302G
Standard Package
100
Fake Threat In the Open Market
62 pct.

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