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3LN01C-TB-E

Name: 3LN01C-TB-E
Brand: ON Semiconductor
Price: 3.56 USD
Rating: 4.8 (6586 reviews)

Transistors - FETs, MOSFETs - RF

Manufacturer No:: 3LN01C-TB-E
Manufacture:: ON Semiconductor
Datasheet:: 3LN01C-TB-E
Description:: MOSFET N-CH 30V 150MA 3CP

In Stock

134100 pcs On sales

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Product Attribute

ON Semiconductor 3LN01C-TB-E technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 3LN01C-TB-E.

Categories: Discrete Semiconductor Products
Manufacturer: ON Semiconductor
Packaging: Reel - TR
Status: Not For New Designs
Polarity: N-Channel
Technology: MOSFET
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Max Gate Charge: 1.58nC @ 10V
Max Input Capacitance: 7pF @ 10V
Maximum Gate-Source Voltage: ±10V
Power Dissipation (Max): 250mW (Ta)
Maximum Rds On at Id,Vgs: 3.7 Ohm @ 80mA, 4V
Temperature Range - Operating: 150°C (TJ)
Mounting: SMD (SMT)
Case / Package: 3-CP
Dimension: TO-236-3, SC-59, SOT-23-3
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient

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