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55GN01CA-TB-E

RF Transistors (BJT)

Manufacturer No:
55GN01CA-TB-E
Manufacture:
ON Semiconductor
Datasheet:
55GN01CA-TB-E
Description:
TRANS NPN BIPOLAR 10V 70MA CP

In Stock

70300 pcs On sales

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Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

ON Semiconductor 55GN01CA-TB-E technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 55GN01CA-TB-E.

Categories
Discrete Semiconductor Products
Manufacturer
ON Semiconductor
Packaging
Reel - TR
Status
Active
Transistor Polarity
NPN
VCEO Maximum Collector-Emitter Breakdown Voltage
10V
Frequency - Transition
4.5GHz
Noise Figure (dB Typ @ f)
1.9dB @ 1GHz
Gain
9.5dB
Maximum Power Dissipation
200mW
Typical Gain (hFE) (Min)
100 @ 10mA, 5V
Maximum Current Collector
70mA
Temperature Range - Operating
150°C (TJ)
Mounting
SMD (SMT)
Case / Package
3-CP
Popularity
Medium
Fake Threat In the Open Market
43 pct.
Supply and Demand Status
Sufficient

Company Profile

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