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DTC113EM3T5G

RF Transistors (BJT)

Manufacturer No:
DTC113EM3T5G
Manufacture:
ON Semiconductor
Package:
SOT-723
Datasheet:
DTC113EM3T5G
Description:
TRANS PREBIAS NPN 50V SOT723 / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 260 mW Surface Mount SOT-723

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Product Attribute

ON Semiconductor DTC113EM3T5G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor DTC113EM3T5G.

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr
onsemi
Package
Tape & Reel (TR)
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
1 kOhms
Resistor - Emitter Base (R2)
1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 5mA, 10mA
Current - Collector Cutoff (Max)
500nA
Power - Max
260 mW
Mounting
SMD (SMT)
Package / Case
SOT-723
Supplier Device Package
SOT-723
Base Product Number
DTC113
MSL Level
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
ONSONSDTC113EM3T5G,2156-DTC113EM3T5G-OS
Standard Package
8,000
Fake Threat In the Open Market
76 pct.

Company Profile

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