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FCP360N65S3R0
Transistors - FETs, MOSFETs - RF
- Manufacturer No:
- FCP360N65S3R0
- Manufacture:
- ON Semiconductor
- Package:
- TO-220-3
- Datasheet:
- FCP360N65S3R0
- Description:
- MOSFET N-CH 650V 10A TO220-3 / N-Channel 650 V 10A (Tc) 83W (Tc) Through Hole TO-220-3
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Shipping Cost
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
ON Semiconductor FCP360N65S3R0 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor FCP360N65S3R0.
- Category
- Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
- Mfr
- onsemi
- Series
- SuperFET® III
- Package
- Tube
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 650 V
- Current - Continuous Drain (Id) @ 25°C
- 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Rds On (Max) @ Id, Vgs
- 360mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id
- 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs
- 18 nC @ 10 V
- Vgs (Max)
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds
- 730 pF @ 400 V
- Power Dissipation (Max)
- 83W (Tc)
- Temperature Range - Operating
- -55°C ~ 150°C (TJ)
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-220-3
- Package / Case
- TO-220-3
- Base Product Number
- FCP360
- MSL Level
- Not Applicable
- REACH Status
- REACH Unaffected
- ECCN
- EAR99
- HTSUS
- 8541.29.0095
- Other Names
- 2156-FCP360N65S3R0-488
- Standard Package
- 800
- Fake Threat In the Open Market
- 56 pct.
Company Profile
FCP360N65S3R0 Relevant information
FCP360N65S3R0
MOSFET N-CH 650V 10A TO220-3 / N-Channel 650 V 10A (Tc) 83W (Tc) Through Hole TO-220-3
FCP36N60N
Trans MOSFET N-CH 600V 36A 3-Pin(3+Tab) TO-220 Tube / MOSFET N-CH 600V 36A TO-220-3
FCP380N60
MOSFET N-CH 600V TO220-3
FCP380N60E
MOSFET N-CH 600V TO220-3