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MBT35200MT1G

Transistors (BJT) - Single

Manufacturer No:
MBT35200MT1G
Manufacture:
ON Semiconductor
Datasheet:
MBT35200MT1G
Description:
TRANS PNP 35V 2A 6TSOP

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105600 pcs On sales

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Product Attribute

ON Semiconductor MBT35200MT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MBT35200MT1G.

Categories
Discrete Semiconductor Products
Manufacturer
ON Semiconductor
Packaging
Reel - TR
Status
Active
Transistor Polarity
PNP
Maximum Current Collector
2A
VCEO Maximum Collector-Emitter Breakdown Voltage
35V
Max Vce (sat)
310mV @ 20mA, 2A
Collector Cut-off Current(Max)
100nA
Typical Gain (hFE) (Min)
100 @ 1.5A, 1.5V
Maximum Power Dissipation
625mW
Frequency - Transition
100MHz
Temperature Range - Operating
-55°C to 150°C (TJ)
Mounting
SMD (SMT)
Case / Package
6-TSOP

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