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MBT3946DW1T2G

Transistors (BJT) - Arrays

Manufacturer No:
MBT3946DW1T2G
Manufacture:
ON Semiconductor
Datasheet:
MBT3946DW1T2G
Description:
TRANS NPN/PNP 40V 0.2A SOT363

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18000 pcs On sales

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Product Attribute

ON Semiconductor MBT3946DW1T2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MBT3946DW1T2G.

Categories
Discrete Semiconductor Products
Manufacturer
ON Semiconductor
Packaging
Reel - TR
Status
Active
Transistor Polarity
NPN, PNP
Maximum Current Collector
200mA
VCEO Maximum Collector-Emitter Breakdown Voltage
40V
Max Vce (sat)
300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Typical Gain (hFE) (Min)
100 @ 10mA, 1V
Maximum Power Dissipation
150mW
Frequency - Transition
300MHz, 250MHz
Temperature Range - Operating
-55°C to 150°C (TJ)
Mounting
SMD (SMT)
Case / Package
SC-88/SC70-6/SOT-363

Company Profile

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