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MGSF1N02LT1G

Transistors - FETs, MOSFETs - RF

Manufacturer No:
MGSF1N02LT1G
Manufacture:
ON Semiconductor
Datasheet:
MGSF1N02LT1G
Description:
MOSFET N-CH 20V 750MA SOT23

In Stock

53738 pcs On sales

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Product Attribute

ON Semiconductor MGSF1N02LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MGSF1N02LT1G.

Categories
Discrete Semiconductor Products
Manufacturer
ON Semiconductor
Packaging
Reel - TR
Status
Active
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
20V
Continuous Drain Current at 25°C
750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Gate-Source Threshold Voltage
2.4V @ 250μA
Max Input Capacitance
125pF @ 5V
Maximum Gate-Source Voltage
±20V
Power Dissipation (Max)
400mW (Ta)
Maximum Rds On at Id,Vgs
90 mOhm @ 1.2A, 10V
Temperature Range - Operating
-55°C to 150°C (TJ)
Mounting
SMD (SMT)
Case / Package
SOT-23-3 (TO-236)
Dimension
TO-236-3, SC-59, SOT-23-3
Popularity
Medium
Fake Threat In the Open Market
28 pct.
Supply and Demand Status
Limited
Application Field
Used in Portable Devices, Consumer Electronics, Power Management, Computers & Computer Peripherals, Industrial

Company Profile

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MGSF1N02LT1G Relevant information

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