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MJD112-1G

Transistors (BJT) - Single

Manufacturer No:
MJD112-1G
Manufacture:
ON Semiconductor
Datasheet:
MJD112-1G
Description:
TRANS NPN DARL 100V 2A IPAK

In Stock

5840 pcs On sales

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Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

ON Semiconductor MJD112-1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD112-1G.

Categories
Discrete Semiconductor Products
Manufacturer
ON Semiconductor
Packaging
Tube/Rail
Status
Active
Transistor Polarity
NPN - Darlington
Maximum Current Collector
2A
VCEO Maximum Collector-Emitter Breakdown Voltage
100V
Max Vce (sat)
3V @ 40mA, 4A
Collector Cut-off Current(Max)
20μA
Typical Gain (hFE) (Min)
1000 @ 2A, 3V
Maximum Power Dissipation
1.75W
Frequency - Transition
25MHz
Temperature Range - Operating
-65°C to 150°C (TJ)
Mounting
Through Hole
Case / Package
I-Pak

Company Profile

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MJD112-1G Relevant information

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