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MMUN2111LT3G
Transistors (BJT) - Single, Pre - Biased
- Manufacturer No:
- MMUN2111LT3G
- Manufacture:
- ON Semiconductor
- Datasheet:
- MMUN2111LT3G
- Description:
- Digital Transistors (BRT) R1 = 10 k, R2 = 10 k | TRANS PREBIAS PNP 246MW SOT23-3
In Stock
120000 pcs On sales
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Shipping Cost
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
ON Semiconductor MMUN2111LT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMUN2111LT3G.
- Categories
- Discrete Semiconductor Products
- Manufacturer
- ON Semiconductor
- Packaging
- Reel
- Transistor Type
- PNP - Pre-Biased
- Current - Collector (Ic) (Maximum)
- 100mA
- Voltage - Collector Emitter Breakdown (Maximum)
- 50V
- Resistor - Base (R1)
- 10 kOhms
- Resistor - Emitter Base (R2)
- 10 kOhms
- DC Current Gain (hFE) (Minimum) at Ic, Vce
- 35 at 5mA, 10V
- Vce Saturation (Maximum) at Ib, Ic
- 250mV at 300μA, 10mA
- Current - Collector Cutoff (Maximum)
- 500nA
- Maximum Power
- 246mW
- Mounting Style
- SMD
- Manufacturer Package
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package
- SOT-23-3 (TO-236)
- Family Part Number
- MMUN21**L
- Manufacturer Pack Quantity
- 1
- MSL Level
- 1 (Unlimited)
- Popularity
- Medium
- Fake Threat In the Open Market
- 47 pct.
- Supply and Demand Status
- Sufficient
Company Profile
MMUN2111LT3G Relevant information
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