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MMUN2232LT1G

Transistors (BJT) - Single, Pre - Biased

Manufacturer No:
MMUN2232LT1G
Manufacture:
ON Semiconductor
Datasheet:
MMUN2232LT1G
Description:
TRANS PREBIAS NPN 246MW SOT23-3

In Stock

536200 pcs On sales

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Product Attribute

ON Semiconductor MMUN2232LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMUN2232LT1G.

Categories
Discrete Semiconductor Products
Manufacturer
ON Semiconductor
Packaging
Reel - TR
Status
Active
Transistor Polarity
NPN - Pre-Biased
Maximum Current Collector
100mA
VCEO Maximum Collector-Emitter Breakdown Voltage
50V
Resistor - Base (R1) (Ohms)
4.7k
Resistor - Emitter Base (R2) (Ohms)
4.7k
Typical Gain (hFE) (Min)
15 @ 5mA, 10V
Max Vce (sat)
250mV @ 1mA, 10mA
Collector Cut-off Current(Max)
500nA
Maximum Power Dissipation
246mW
Mounting
SMD (SMT)
Case / Package
SOT-23-3 (TO-236)
Is this a common-used part?
Yes
Popularity
High
Fake Threat In the Open Market
48 pct.
Supply and Demand Status
Sufficient

Company Profile

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