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MTW32N20E

Transistors - FETs, MOSFETs - RF

Manufacturer No:
MTW32N20E
Manufacture:
ON Semiconductor
Datasheet:
MTW32N20E
Description:
MOSFET N-CH 200V 32A TO-247

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0 pcs On sales

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Product Attribute

ON Semiconductor MTW32N20E technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MTW32N20E.

Categories
Discrete Semiconductor Products
Manufacturer
ON Semiconductor
Packaging
Tube/Rail
Status
Obsolete(EOL)
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
200V
Continuous Drain Current at 25°C
32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate-Source Threshold Voltage
4V @ 250μA
Max Gate Charge
120nC @ 10V
Max Input Capacitance
5000pF @ 25V
Maximum Gate-Source Voltage
±20V
Power Dissipation (Max)
180W (Tc)
Maximum Rds On at Id,Vgs
75 mOhm @ 16A, 10V
Temperature Range - Operating
-55°C to 150°C (TJ)
Mounting
Through Hole
Case / Package
TO-247
Dimension
TO-247-3
Popularity
Medium
Fake Threat In the Open Market
61 pct.
Supply and Demand Status
Balance

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

MTW32N20E Relevant information

MTW32N20E
MTW32N20E

MOSFET N-CH 200V 32A TO-247

MTW32N20EG
MTW32N20EG

MOSFET N-CH 200V 32A TO247

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