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NID9N05ACLT4G

Transistors - FETs, MOSFETs - RF

Manufacturer No:
NID9N05ACLT4G
Manufacture:
ON Semiconductor
Datasheet:
NID9N05ACLT4G
Description:
MOSFET N-CH 52V 9A LL DPAK-3

In Stock

20000 pcs On sales

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Product Attribute

ON Semiconductor NID9N05ACLT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NID9N05ACLT4G.

Categories
Discrete Semiconductor Products
Manufacturer
ON Semiconductor
Packaging
Reel - TR
Status
Active
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
52V
Continuous Drain Current at 25°C
9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
3V, 12V
Gate-Source Threshold Voltage
2.5V @ 100μA
Max Gate Charge
7nC @ 4.5V
Max Input Capacitance
250pF @ 40V
Maximum Gate-Source Voltage
±15V
Power Dissipation (Max)
1.74W (Ta)
Maximum Rds On at Id,Vgs
90 mOhm @ 9A, 12V
Temperature Range - Operating
-55°C to 175°C (TJ)
Mounting
SMD (SMT)
Case / Package
DPAK-3
Dimension
TO-252-3, DPak (2 Leads + Tab), SC-63
Popularity
Medium
Fake Threat In the Open Market
51 pct.
Supply and Demand Status
Balance

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

NID9N05ACLT4G Relevant information

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