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NSBA114EDXV6T1G

Name: NSBA114EDXV6T1G
Brand: ON Semiconductor
Price: 0.9 USD
Rating: 4.8 (6586 reviews)

Transistors (BJT) - Arrays, Pre - Biased

Manufacturer No:: NSBA114EDXV6T1G
Manufacture:: ON Semiconductor
Datasheet:: NSBA114EDXV6T1G
Description:: TRANS 2PNP PREBIAS 0.5W SOT563

In Stock

9460 pcs On sales

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Product Attribute

ON Semiconductor NSBA114EDXV6T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSBA114EDXV6T1G.

Categories: Discrete Semiconductor Products
Manufacturer: ON Semiconductor
Packaging: Reel - TR
Status: Active
Transistor Polarity: 2 PNP - Pre-Biased (Dual)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Typical Gain (hFE) (Min): 35 @ 5mA, 10V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Maximum Power Dissipation: 500mW
Mounting: SMD (SMT)
Case / Package: SOT-563
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Company Profile

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