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NSS40300DDR2G

Transistors (BJT) - Arrays

Manufacturer No:
NSS40300DDR2G
Manufacture:
ON Semiconductor
Datasheet:
NSS40300DDR2G
Description:
Dual 40 V, 6.0 A, Low VCE(sat) PNP Transistor

In Stock

17900 pcs On sales

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Product Attribute

ON Semiconductor NSS40300DDR2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSS40300DDR2G.

Categories
Discrete Semiconductor Products
Manufacturer
ON Semiconductor
Packaging
Reel - TR
Transistor Type
2 PNP (Dual)
Current - Collector (Ic) (Maximum)
3A
Voltage - Collector Emitter Breakdown (Maximum)
40V
Vce Saturation (Maximum) @ Ib, Ic
170mV @ 200mA, 2A
Current - Collector Cutoff (Maximum)
100nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce
180 @ 1A, 2V
Power - Max
653mW
Frequency - Transition
100MHz
Operating Temperature Range
-55°C ~ 150°C (TJ)
Mounting
SMD
Package
8-SOIC (0.154", 3.90mm Width)
Manufacturer Package
8-SOIC
Manufacturer Homepage
www.onsemi.com
Popularity
Medium
Fake Threat In the Open Market
49 pct.
Supply and Demand Status
Balance
Family Name
NSS40300DDR2G
Introduction Date
September 03, 2008
ECCN
EAR99
Country of Origin
Philippines
Halogen Free
Compliant
Estimated EOL Date
2023

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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