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NSS60200LT1G

Transistors (BJT) - Single

Manufacturer No:
NSS60200LT1G
Manufacture:
ON Semiconductor
Datasheet:
NSS60200LT1G
Description:
TRANS PNP 60V 2A SOT-23

In Stock

20000 pcs On sales

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Product Attribute

ON Semiconductor NSS60200LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSS60200LT1G.

Categories
Discrete Semiconductor Products
Manufacturer
ON Semiconductor
Packaging
Reel - TR
Status
Active
Transistor Polarity
PNP
Maximum Current Collector
2A
VCEO Maximum Collector-Emitter Breakdown Voltage
60V
Max Vce (sat)
220mV @ 200mA, 2A
Collector Cut-off Current(Max)
100nA (ICBO)
Typical Gain (hFE) (Min)
150 @ 500mA, 2V
Maximum Power Dissipation
460mW
Frequency - Transition
100MHz
Temperature Range - Operating
-55°C to 150°C (TJ)
Mounting
SMD (SMT)
Case / Package
SOT-23-3 (TO-236)
Family Name
NSS60200L
Introduction Date
May 24, 2007
ECCN
EAR99
Country of Origin
China
Halogen Free
Compliant
Estimated EOL Date
2023
Is this a common-used part?
Yes
Popularity
High
Fake Threat In the Open Market
33 pct.
Supply and Demand Status
Balance

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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