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NST30010MXV6T1G

Transistors (BJT) - Arrays

Manufacturer No:
NST30010MXV6T1G
Manufacture:
ON Semiconductor
Datasheet:
NST30010MXV6T1G
Description:
TRANS 2PNP 30V 0.1A SOT563

In Stock

1810 pcs On sales

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Product Attribute

ON Semiconductor NST30010MXV6T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NST30010MXV6T1G.

Categories
Discrete Semiconductor Products
Manufacturer
ON Semiconductor
Packaging
Reel - TR
Status
Active
Transistor Polarity
2 PNP (Dual) Matched Pair
Maximum Current Collector
100mA
VCEO Maximum Collector-Emitter Breakdown Voltage
30V
Max Vce (sat)
600mV @ 5mA, 100mA
Collector Cut-off Current(Max)
15nA (ICBO)
Typical Gain (hFE) (Min)
420 @ 2mA, 5V
Maximum Power Dissipation
500mW
Frequency - Transition
100MHz
Temperature Range - Operating
-55°C to 150°C (TJ)
Mounting
SMD (SMT)
Case / Package
SOT-563
Popularity
Medium
Fake Threat In the Open Market
37 pct.
Supply and Demand Status
Balance

Company Profile

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