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NSTB60BDW1T1G

Transistors (BJT) - Arrays, Pre - Biased

Manufacturer No:
NSTB60BDW1T1G
Manufacture:
ON Semiconductor
Datasheet:
NSTB60BDW1T1G
Description:
TRANS NPN PREBIAS/PNP 0.25W SC88

In Stock

6000 pcs On sales

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Product Attribute

ON Semiconductor NSTB60BDW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSTB60BDW1T1G.

Categories
Discrete Semiconductor Products
Manufacturer
ON Semiconductor
Packaging
Reel - TR
Status
Active
Transistor Polarity
1 NPN Pre-Biased, 1 PNP
Maximum Current Collector
150mA
VCEO Maximum Collector-Emitter Breakdown Voltage
50V
Resistor - Base (R1) (Ohms)
22k
Resistor - Emitter Base (R2) (Ohms)
47k
Typical Gain (hFE) (Min)
80 @ 5mA, 10V / 120 @ 5mA, 10V
Max Vce (sat)
250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
Collector Cut-off Current(Max)
500nA
Frequency - Transition
140MHz
Maximum Power Dissipation
250mW
Mounting
SMD (SMT)
Case / Package
SC-88/SC70-6/SOT-363
Popularity
Medium
Fake Threat In the Open Market
45 pct.
Supply and Demand Status
Balance

Company Profile

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