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NTH4L080N120SC1

Name: NTH4L080N120SC1
Brand: ON Semiconductor
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

Transistors - FETs, MOSFETs - RF

Manufacturer No:: NTH4L080N120SC1
Manufacture:: ON Semiconductor
Package:: TO-247-4
Datasheet:: NTH4L080N120SC1
Description:: SICFET N-CH 1200V 29A TO247-4 / N-Channel 1200 V 29A (Tc) 170W (Tc) Through Hole TO-247-4L

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

ON Semiconductor NTH4L080N120SC1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTH4L080N120SC1.

Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr: onsemi
Package: Tube
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Vgs (Max): +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
Power Dissipation (Max): 170W (Tc)
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-4L
Package / Case: TO-247-4
Base Product Number: NTH4L080
MSL Level: Not Applicable
REACH Status: REACH Unaffected
ECCN: EAR99
HTSUS: 8541.29.0095
Other Names: 488-NTH4L080N120SC1
Standard Package: 30
Fake Threat In the Open Market: 81 pct.

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