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NTMD2C02R2G

Transistors - FETs, MOSFETs - RF

Manufacturer No:
NTMD2C02R2G
Manufacture:
ON Semiconductor
Datasheet:
NTMD2C02R2G
Description:
MOSFET N/P-CH 20V 8SOIC

In Stock

5170 pcs On sales

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Product Attribute

ON Semiconductor NTMD2C02R2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTMD2C02R2G.

Categories
Discrete Semiconductor Products
Manufacturer
ON Semiconductor
Packaging
Reel - TR
Status
Obsolete(EOL)
FET Type
N and P-Channel
FET Feature
Logic Level Gate
Drain-Source Breakdown Voltage
20V
Continuous Drain Current at 25°C
5.2A, 3.4A
Maximum Rds On at Id,Vgs
43 mOhm @ 4A, 4.5V
Gate-Source Threshold Voltage
1.2V @ 250μA
Max Gate Charge
20nC @ 4.5V
Max Input Capacitance
1100pF @ 10V
Maximum Power Dissipation
2W
Temperature Range - Operating
-55°C to 150°C (TJ)
Mounting
SMD (SMT)
Case / Package
8-SOIC
Popularity
Medium
Fake Threat In the Open Market
28 pct.
Supply and Demand Status
Balance

Company Profile

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NTMD2C02R2G Relevant information

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