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NTMS4107NR2G

Transistors - FETs, MOSFETs - RF

Manufacturer No:
NTMS4107NR2G
Manufacture:
ON Semiconductor
Datasheet:
NTMS4107NR2G
Description:
MOSFET N-CH 30V 11A 8-SOIC

In Stock

101100 pcs On sales

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Product Attribute

ON Semiconductor NTMS4107NR2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTMS4107NR2G.

Categories
Discrete Semiconductor Products
Manufacturer
ON Semiconductor
Packaging
Reel - TR
Status
Obsolete(EOL)
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
30V
Continuous Drain Current at 25°C
11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Gate-Source Threshold Voltage
2.5V @ 250μA
Max Gate Charge
45nC @ 4.5V
Max Input Capacitance
6000pF @ 15V
Maximum Gate-Source Voltage
±20V
Power Dissipation (Max)
930mW (Ta)
Maximum Rds On at Id,Vgs
4.5 mOhm @ 15A, 10V
Temperature Range - Operating
-55°C to 150°C (TJ)
Mounting
SMD (SMT)
Case / Package
8-SOIC
Dimension
8-SOIC (0.154", 3.90mm Width)
Popularity
Medium
Fake Threat In the Open Market
33 pct.
Supply and Demand Status
Balance

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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