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NTP30N20

Transistors - FETs, MOSFETs - RF

Manufacturer No:
NTP30N20
Manufacture:
ON Semiconductor
Datasheet:
NTP30N20
Description:
MOSFET N-CH 200V 30A TO220AB

In Stock

1400 pcs On sales

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Product Attribute

ON Semiconductor NTP30N20 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTP30N20.

Categories
Discrete Semiconductor Products
Manufacturer
ON Semiconductor
Packaging
Tube/Rail
Status
Obsolete(EOL)
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
200V
Continuous Drain Current at 25°C
30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate-Source Threshold Voltage
4V @ 250μA
Max Gate Charge
100nC @ 10V
Max Input Capacitance
2335pF @ 25V
Maximum Gate-Source Voltage
±30V
Power Dissipation (Max)
214W (Tc)
Maximum Rds On at Id,Vgs
81 mOhm @ 15A, 10V
Temperature Range - Operating
-55°C to 175°C (TJ)
Mounting
Through Hole
Case / Package
TO-220AB
Dimension
TO-220-3
Popularity
Medium
Fake Threat In the Open Market
57 pct.
Supply and Demand Status
Limited

Company Profile

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