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NTR3162PT1G

Transistors - FETs, MOSFETs - RF

Manufacturer No:
NTR3162PT1G
Manufacture:
ON Semiconductor
Datasheet:
NTR3162PT1G
Description:
MOSFET P-CH 20V 2.2A SOT-23

In Stock

4200 pcs On sales

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Product Attribute

ON Semiconductor NTR3162PT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTR3162PT1G.

Categories
Discrete Semiconductor Products
Manufacturer
ON Semiconductor
Packaging
Reel - TR
Status
Obsolete(EOL)
Polarity
P-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
20V
Continuous Drain Current at 25°C
2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Gate-Source Threshold Voltage
1V @ 250μA
Max Gate Charge
10.3nC @ 4.5V
Max Input Capacitance
940pF @ 10V
Maximum Gate-Source Voltage
±8V
Power Dissipation (Max)
480mW (Ta)
Maximum Rds On at Id,Vgs
70 mOhm @ 2.2A, 4.5V
Temperature Range - Operating
-55°C to 150°C (TJ)
Mounting
SMD (SMT)
Case / Package
SOT-23-3 (TO-236)
Dimension
TO-236-3, SC-59, SOT-23-3
Popularity
Medium
Fake Threat In the Open Market
69 pct.
Supply and Demand Status
Limited
Application Field
Used in Power Management, Computers & Computer Peripherals, Portable Devices, Industrial

Company Profile

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