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NTS2101PT1G

Name: NTS2101PT1G
Brand: ON Semiconductor
Price: 1.28 USD
Rating: 4.8 (6586 reviews)

Transistors - FETs, MOSFETs - RF

Manufacturer No:: NTS2101PT1G
Manufacture:: ON Semiconductor
Datasheet:: NTS2101PT1G
Description:: MOSFET P-CH 8V 1.4A SOT-323

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49315 pcs On sales

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Product Attribute

ON Semiconductor NTS2101PT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTS2101PT1G.

Categories: Discrete Semiconductor Products
Manufacturer: ON Semiconductor
Packaging: Reel - TR
Status: Active
Polarity: P-Channel
Technology: MOSFET
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Gate-Source Threshold Voltage: 700mV @ 250μA
Max Gate Charge: 6.4nC @ 5V
Max Input Capacitance: 640pF @ 8V
Maximum Gate-Source Voltage: ±8V
Power Dissipation (Max): 290mW (Ta)
Maximum Rds On at Id,Vgs: 100 mOhm @ 1A, 4.5V
Temperature Range - Operating: -55°C to 150°C (TJ)
Mounting: SMD (SMT)
Case / Package: SC-70-3 (SOT323)
Dimension: SC-70, SOT-323
Family Name: NTS2101P
Introduction Date: June 08, 2004
ECCN: EAR99
Country of Origin: China
Halogen Free: Compliant
Estimated EOL Date: 2024
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance

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